Abstract
Self-radiating oscillators in the millimeter wave range can be built by combining a slot resonator with an impatt diode. Good performance can be achieved only if the input impedance of the slot, seen at the terminals of the impatt diode, is in the proper range. The input impedance, obtained by a rigorous full wave analysis, is presented as a function of the slot width and substrate height for silicon and PTFE. It is shown that the required input resistance (typically is 2-5 Ω) can be achieved by choosing narrow slots. The variation of the slot width allows an optimal matching of the resonator to the diode for any desired bias current. Comparison with a recently published self-radiating oscillator shows the validity of the simulation.
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 381-384 |
| Seitenumfang | 4 |
| Fachzeitschrift | IEEE MTT-S International Microwave Symposium Digest |
| Jahrgang | 1 |
| Publikationsstatus | Veröffentlicht - Juni 1992 |
| Veranstaltung | 1992 IEEE MTT-S International Microwave Symposium Digest Part 2 (of 3) - Albuquerque, NM, USA Dauer: 1 Juni 1992 → 5 Juni 1992 |