Abstract
Using an atomic force microscope a ring geometry with self-aligned in-plane gates was directly written into a GaAs/AlGaAs heterostructure. Transport measurements in the open regime show only one transmitting mode and Aharonov-Bohm oscillations with more than 50% modulation are observed in the conductance. The tuning via in-plane gates allows one to study the Aharonov-Bohm effect in the whole range from the open ring to the Coulomb-blockade regime.
Originalsprache | Englisch |
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Seiten (von - bis) | L22-L24 |
Fachzeitschrift | Semiconductor Science and Technology |
Jahrgang | 17 |
Ausgabenummer | 5 |
DOIs | |
Publikationsstatus | Veröffentlicht - Mai 2002 |