A wide range temperature stable integrated current reference

Matthias Radecker, Alois Knoll, Robert Kocaman, Viktor Buguszewicz, Ralf Rudolf

Publikation: Beitrag in FachzeitschriftKonferenzartikelBegutachtung

7 Zitate (Scopus)

Abstract

A current reference integrated circuit was built in a 2 micron CMOS process base on SIMOX technology, without the need of external trimming, to provide 19.5μA. the overall error was less than +/-1% (< 67 ppm/k) over 240 K temperature range from -40 to 200 °C (Vdd10V), at a power consumption of less than 1.5 mW. From -15 to 90°C the TC was < 12 ppm/K, derived by higher order temperature compensation. The temperature dependence of the diode parameters is cancelled out against the temperature coefficient of the resistors. The error of the absolute current value was +/-5% (30 circuits from two different wafers). The circuit of 0.3 mm2 contains p-channel and n-channel MOS transistors, pin-diodes, and p+ resistors. It is applicable for oscillator and filter frequency stability, and for precise time delay circuits, especially in smart power and high temperature applications.

OriginalspracheEnglisch
Aufsatznummer1257202
Seiten (von - bis)583-586
Seitenumfang4
FachzeitschriftEuropean Solid-State Circuits Conference
DOIs
PublikationsstatusVeröffentlicht - 2003
Extern publiziertJa
Veranstaltung29th European Solid-State Circuits Conference, ESSCIRC 2003 - Estoril, Portugal
Dauer: 16 Sept. 200318 Sept. 2003

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