A Novel Gate Driver for Suppressing Overcurrent and Overvoltage of SiC MOSFET

Jiangui Chen, Yan Li, Mei Liang, R. Kennel, Jiayu Liu, Haobo Guo

Publikation: Beitrag in Buch/Bericht/KonferenzbandKonferenzbeitragBegutachtung

3 Zitate (Scopus)

Abstract

SiC MOSFET has faster switching speed, lower RDs(on), and higher breakdown voltage when compared with Si MOSFET. Therefore., SiC MOSFET can work at work at higher frequencies., even Mhz. However., the overvoltage and overcurrent (OVOC) of SiC MOSFET become more serious with the increase of frequency due to the low damping and the parasitic parameters in the actual circuit. The causes of overcurrent and overvoltage of SiC MOSFET are analyzed in this paper., and a gate driver with the variable gate resistance and the variable driving voltage and is proposed to suppress OVOC of SiC MOSFET. This paper analyzes the working mode of the proposed gate driver (PGD). The PGD can effectively suppress the OVOC of SiC MOSFET. Finally., the effectiveness of the PGD is verified based on a double-pulse test platform.

OriginalspracheEnglisch
TitelICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
Seiten147-153
Seitenumfang7
ISBN (elektronisch)9788957083130
PublikationsstatusVeröffentlicht - Mai 2019
Veranstaltung10th International Conference on Power Electronics - ECCE Asia, ICPE 2019 - ECCE Asia - Busan, Südkorea
Dauer: 27 Mai 201930 Mai 2019

Publikationsreihe

NameICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia

Konferenz

Konferenz10th International Conference on Power Electronics - ECCE Asia, ICPE 2019 - ECCE Asia
Land/GebietSüdkorea
OrtBusan
Zeitraum27/05/1930/05/19

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