A nanogap electrode platform for organic monolayer-film devices

Simon Pfaehler, Kevin Keim, Reka Csiki, Quoc Hung Nguyen, Kung Ching Liao, Martin Stutzmann, Jeffrey Schwartz, Anna Cattani-Scholz, Marc Tornow

Publikation: Beitrag in Buch/Bericht/KonferenzbandKonferenzbeitragBegutachtung

4 Zitate (Scopus)

Abstract

The fabrication and electrical characterization of organic monolayer functionalized, planar silicon nanogap electrode devices is described. Highly doped silicon nanogap electrodes were fabricated with contact separation as small as 200 nm by anisotropic etching of silicon-on-insulator (SOI) substrates using KOH and a patterned metal film as the etch mask. Conductance was greatly improved compared to an untreated device by self-assembly of a monolayer of an aromatic organophosphonate in the nanogap. This device is a prototype for development of self-assembled monolayer-functionalized field-effect transistors involving all-silicon contact electrodes.

OriginalspracheEnglisch
Titel16th International Conference on Nanotechnology - IEEE NANO 2016
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
Seiten842-844
Seitenumfang3
ISBN (elektronisch)9781509039142
DOIs
PublikationsstatusVeröffentlicht - 21 Nov. 2016
Veranstaltung16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Dauer: 22 Aug. 201625 Aug. 2016

Publikationsreihe

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Konferenz

Konferenz16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Land/GebietJapan
OrtSendai
Zeitraum22/08/1625/08/16

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