@inproceedings{41fe830eea4e48d785da8a4538c300a5,
title = "A fully integrated SiGe low phase noise push-push VCO for 82 GHz",
abstract = "We present a fully monolithically integrated push-push oscillator fabricated in a production-near SiGe:C bipolar technology. The oscillator output frequency can be varactor tuned from 80.6 GHz to 82.4 GHz. In this frequency range the measured output power is 3.5 ± 0.4 dBm while the measured single sideband phase noise is less than - 105dBc/Hz at 1MHz offset frequency. To our knowledge this phase noise level is the lowest one reported in literature so far for an VCO in this frequency band. The transistors used in this work show a maximum transit frequency fT = 200 GHz and a maximum frequency of oscillation fmax = 275 GHz. For the passive circuitry transmission-line components, MIM-capacitors and integrated resistors are used.",
author = "Robert Wanner and Herbert Sch{\"a}fer and Rudolf Lachner and Olbrich, {Gerhard R.} and Peter Russer",
year = "2005",
language = "English",
isbn = "8890201207",
series = "GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium",
pages = "249--252",
booktitle = "GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium",
note = "GAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium ; Conference date: 03-10-2005 Through 04-10-2005",
}