A CMOS Temperature Stabilized 2-D Mechanical Stress Sensor with 11-bit Resolution

Using an unmodified 130-nm CMOS process, we present the design of an integrated 2-D CMOS stress sensor and trim methodology resulting in 11-bit resolution and 66-dB dynamic range. The n-well-only primary sensing elements and p-Type auxiliary elements allow post-calibrated measurement of both stress magnitude and angle over the commercial temperature range from 5 °C to 90 °C. The implementation is robust to process variation, requires 357 \mu \text{W} when active, and is optimized for duty cycling to reduce system energy consumption.