A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s

M. Jefremow; T. Kern; U. Backhausen; J. Elbs; B. Rousseau; C. Roll; L. Castro; T. Roehr; E. Paparisto; K. Herfurth; R. Bartenschlager; S. Thierold; R. Renardy; S. Kassenetter; N. Lawal; M. Strasser; W. Trottmann; D. Schmitt-Landsiedel

doi:10.1109/ESSCIRC.2013.6649105

A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s

M. Jefremow
, T. Kern
, U. Backhausen
, J. Elbs
, B. Rousseau
, C. Roll
, L. Castro
, T. Roehr
, E. Paparisto
, K. Herfurth
, R. Bartenschlager
, S. Thierold
, R. Renardy
, S. Kassenetter
, N. Lawal
, M. Strasser
, W. Trottmann
, D. Schmitt-Landsiedel

Medicine and Health

Publikation: Beitrag in Buch/Bericht/Konferenzband › Konferenzbeitrag › Begutachtung

6 Zitate (Scopus)

Abstract

This paper presents a 65nm embedded flash macro for automotive applications with read and write throughput of 5.7GB/s and 1.4MB/s respectively. The high read throughput rate is achieved by using the multi voltage domain multiplexer design enabling a low voltage read path and the local ground referenced read circuit design utilizing the robust time domain source side sense amplifier (SoSiSA) [1]. This allows low voltage sub 50mV swing read operation for high speed read-out under more than 30mV system noise. The hot source triple poly (HS3P) embedded flash memory cell [2] allows sub 5μs low current write operation enabling high write throughput up to a junction temperature of 170°C.

Originalsprache	Englisch
Titel	ESSCIRC 2013 - Proceedings of the 39th European Solid-State Circuits Conference
Seiten	193-196
Seitenumfang	4
DOIs	https://doi.org/10.1109/ESSCIRC.2013.6649105
Publikationsstatus	Veröffentlicht - 2013
Veranstaltung	39th European Solid-State Circuits Conference, ESSCIRC 2013 - Bucharest, Rumänien Dauer: 16 Sept. 2013 → 20 Sept. 2013

Publikationsreihe

Name	European Solid-State Circuits Conference
ISSN (Print)	1930-8833

Konferenz

Konferenz	39th European Solid-State Circuits Conference, ESSCIRC 2013
Land/Gebiet	Rumänien
Ort	Bucharest
Zeitraum	16/09/13 → 20/09/13

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10.1109/ESSCIRC.2013.6649105

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Jefremow, M., Kern, T., Backhausen, U., Elbs, J., Rousseau, B., Roll, C., Castro, L., Roehr, T., Paparisto, E., Herfurth, K., Bartenschlager, R., Thierold, S., Renardy, R., Kassenetter, S., Lawal, N., Strasser, M., Trottmann, W., & Schmitt-Landsiedel, D. (2013). A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s. in ESSCIRC 2013 - Proceedings of the 39th European Solid-State Circuits Conference (S. 193-196). Artikel 6649105 (European Solid-State Circuits Conference). https://doi.org/10.1109/ESSCIRC.2013.6649105

@inproceedings{8862883c2cb1498dad2e2fb0e7b9ebf6,

title = "A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s",

abstract = "This paper presents a 65nm embedded flash macro for automotive applications with read and write throughput of 5.7GB/s and 1.4MB/s respectively. The high read throughput rate is achieved by using the multi voltage domain multiplexer design enabling a low voltage read path and the local ground referenced read circuit design utilizing the robust time domain source side sense amplifier (SoSiSA) [1]. This allows low voltage sub 50mV swing read operation for high speed read-out under more than 30mV system noise. The hot source triple poly (HS3P) embedded flash memory cell [2] allows sub 5μs low current write operation enabling high write throughput up to a junction temperature of 170°C.",

author = "M. Jefremow and T. Kern and U. Backhausen and J. Elbs and B. Rousseau and C. Roll and L. Castro and T. Roehr and E. Paparisto and K. Herfurth and R. Bartenschlager and S. Thierold and R. Renardy and S. Kassenetter and N. Lawal and M. Strasser and W. Trottmann and D. Schmitt-Landsiedel",

year = "2013",

doi = "10.1109/ESSCIRC.2013.6649105",

language = "English",

isbn = "9781479906437",

series = "European Solid-State Circuits Conference",

pages = "193--196",

booktitle = "ESSCIRC 2013 - Proceedings of the 39th European Solid-State Circuits Conference",

note = "39th European Solid-State Circuits Conference, ESSCIRC 2013 ; Conference date: 16-09-2013 Through 20-09-2013",

}

Jefremow, M, Kern, T, Backhausen, U, Elbs, J, Rousseau, B, Roll, C, Castro, L, Roehr, T, Paparisto, E, Herfurth, K, Bartenschlager, R, Thierold, S, Renardy, R, Kassenetter, S, Lawal, N, Strasser, M, Trottmann, W & Schmitt-Landsiedel, D 2013, A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s. in ESSCIRC 2013 - Proceedings of the 39th European Solid-State Circuits Conference., 6649105, European Solid-State Circuits Conference, S. 193-196, 39th European Solid-State Circuits Conference, ESSCIRC 2013, Bucharest, Rumänien, 16/09/13. https://doi.org/10.1109/ESSCIRC.2013.6649105

A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s. / Jefremow, M.; Kern, T.; Backhausen, U. et al.
ESSCIRC 2013 - Proceedings of the 39th European Solid-State Circuits Conference. 2013. S. 193-196 6649105 (European Solid-State Circuits Conference).

Publikation: Beitrag in Buch/Bericht/Konferenzband › Konferenzbeitrag › Begutachtung

TY - GEN

T1 - A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s

AU - Jefremow, M.

AU - Kern, T.

AU - Backhausen, U.

AU - Elbs, J.

AU - Rousseau, B.

AU - Roll, C.

AU - Castro, L.

AU - Roehr, T.

AU - Paparisto, E.

AU - Herfurth, K.

AU - Bartenschlager, R.

AU - Thierold, S.

AU - Renardy, R.

AU - Kassenetter, S.

AU - Lawal, N.

AU - Strasser, M.

AU - Trottmann, W.

AU - Schmitt-Landsiedel, D.

PY - 2013

Y1 - 2013

N2 - This paper presents a 65nm embedded flash macro for automotive applications with read and write throughput of 5.7GB/s and 1.4MB/s respectively. The high read throughput rate is achieved by using the multi voltage domain multiplexer design enabling a low voltage read path and the local ground referenced read circuit design utilizing the robust time domain source side sense amplifier (SoSiSA) [1]. This allows low voltage sub 50mV swing read operation for high speed read-out under more than 30mV system noise. The hot source triple poly (HS3P) embedded flash memory cell [2] allows sub 5μs low current write operation enabling high write throughput up to a junction temperature of 170°C.

AB - This paper presents a 65nm embedded flash macro for automotive applications with read and write throughput of 5.7GB/s and 1.4MB/s respectively. The high read throughput rate is achieved by using the multi voltage domain multiplexer design enabling a low voltage read path and the local ground referenced read circuit design utilizing the robust time domain source side sense amplifier (SoSiSA) [1]. This allows low voltage sub 50mV swing read operation for high speed read-out under more than 30mV system noise. The hot source triple poly (HS3P) embedded flash memory cell [2] allows sub 5μs low current write operation enabling high write throughput up to a junction temperature of 170°C.

UR - https://www.scopus.com/pages/publications/84891070740

U2 - 10.1109/ESSCIRC.2013.6649105

DO - 10.1109/ESSCIRC.2013.6649105

M3 - Conference contribution

AN - SCOPUS:84891070740

SN - 9781479906437

T3 - European Solid-State Circuits Conference

SP - 193

EP - 196

BT - ESSCIRC 2013 - Proceedings of the 39th European Solid-State Circuits Conference

T2 - 39th European Solid-State Circuits Conference, ESSCIRC 2013

Y2 - 16 September 2013 through 20 September 2013

ER -

Jefremow M, Kern T, Backhausen U, Elbs J, Rousseau B, Roll C et al. A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s. in ESSCIRC 2013 - Proceedings of the 39th European Solid-State Circuits Conference. 2013. S. 193-196. 6649105. (European Solid-State Circuits Conference). doi: 10.1109/ESSCIRC.2013.6649105

A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s

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