A 60 GHz 30.5% PAE Differential Stacked PA with Second Harmonic Control in 45 nm PD-SOI CMOS

Radu Ciocovean, Robert Weigel, Amelie Hagelauer, Vadim Issakov

Publikation: Beitrag in Buch/Bericht/KonferenzbandKonferenzbeitragBegutachtung

4 Zitate (Scopus)

Abstract

This paper presents a 60 GHz highly efficient single-stage differential stacked Class AB power amplifier (PA) with second harmonic control. The circuit has been realized in a 45 nm PD-SOI CMOS technology. Measurement results show that the power amplifier achieves a maximum output power (Pmax) of 15.3 dBm with a competitive maximum power-added efficiency (PAEmax) of 30.5 % at 60 GHz. The output-referred 1-dB compression point (OP1dB) is 9.5 dBm. Furthermore, the circuit draws 40mA from a 1.8 V supply and the chip core size is 0. 36mmx0.35 mm.

OriginalspracheEnglisch
Titel2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
ISBN (elektronisch)9781538659502
DOIs
PublikationsstatusVeröffentlicht - 7 Mai 2019
Extern publiziertJa
Veranstaltung19th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019 - Orlando, USA/Vereinigte Staaten
Dauer: 20 Jan. 201923 Jan. 2019

Publikationsreihe

Name2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019

Konferenz

Konferenz19th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019
Land/GebietUSA/Vereinigte Staaten
OrtOrlando
Zeitraum20/01/1923/01/19

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