Material Science
Al2O3
5%
Aluminium Gallium Arsenide
28%
Aluminum
7%
Aluminum Oxide
5%
Buffer Solution
6%
Contact Angle
5%
Current Voltage Characteristics
12%
Density
25%
Desorption
11%
Dielectric Material
8%
Electrochemical Property
5%
Electrolyte
14%
Electron Transfer
9%
Film
14%
Gallium
11%
Gallium Arsenide
34%
Gold Nanoparticle
6%
Heterojunction
19%
Hydrodynamics
6%
Indium
7%
Linewidth
5%
Lithography
29%
Magnetoresistance
7%
Metal Film
6%
Metal Surface
8%
Molecular Beam Epitaxy
19%
Monolayers
50%
Nanoparticle
21%
Nanopore
27%
Nanowire
15%
Nitride Compound
15%
Nucleic Acid
21%
Oxide Compound
18%
Reactive Ion Etching
11%
Scanning Electron Microscopy
12%
Self Assembled Monolayer
46%
Self Assembly
14%
Silicon
100%
Silicon Nitride
7%
Single Crystal
5%
Surface (Surface Science)
91%
Surface Functionalization
10%
Thin Films
22%
Titanium
17%
Titanium Dioxide
11%
Wet Etching
8%
Keyphrases
AlGaAs
14%
Alkyl
13%
Aluminum Oxide
10%
Atomic Force Microscopy
9%
Bacteriorhodopsin
9%
Cavity Array
11%
Conductance
17%
Desorption
8%
Directed Self-assembly
11%
DNA Molecule
9%
Electrical Characterization
15%
Electrical Manipulation
9%
Electrolyte Solution
9%
Electronic Transport
18%
Etching Process
12%
Fabrication Methods
8%
GaAs-AlGaAs
10%
Gallium Arsenide
21%
Gold Surface
13%
Heterostructure Nanowires
9%
High-resolution
10%
Insulator Substrate
13%
Magnetoresistance
10%
Memristive Switching
9%
Metal Surface
10%
Molecular Beam Epitaxy
18%
Nanoelectronics
9%
Nanogap
38%
Nanogap Electrodes
36%
Nanoimprint Lithography
17%
Nanometre
13%
Nanopore
27%
Nanotransfer Printing
21%
Nucleic Acids
11%
Oligonucleotides
14%
Organophosphate
38%
Peptide nucleic Acid
11%
Phosphonic Acid
12%
Quantum Wire
11%
Room Temperature
10%
Rutile
11%
Self-assembled Monolayer
49%
Self-assembly
9%
Silicon-based
20%
Silicon-on-insulator
27%
Single-stranded DNA (ssDNA)
21%
Surface Functionalization
8%
Three-dimensional (3D)
8%
Top Contact
14%
Transfer Printing
9%
