Keyphrases
2-dimensional Electron Gas (2DEG)
15%
Band Gap
13%
Core-shell Nanowires
13%
Electroluminescence
18%
Exciton
30%
GaAs Nanowires
31%
GaAs Quantum Dot
23%
GaAs-AlGaAs
40%
Gallium Arsenide
86%
Germanium Quantum Dots
13%
Heterostructure
36%
High Mobility
15%
Inelastic Light Scattering
13%
InGaAs
18%
Intersubband
18%
Low Temperature
25%
Luminescence
26%
Magnetic Field
18%
Mid-infrared
14%
Modulation-doped
30%
Molecular Beam Epitaxy
65%
Multiple Quantum Wells
17%
Nanostructures
12%
Nanowires
32%
Optical Properties
20%
Overgrowth
24%
P-type
17%
Phonons
22%
Photocurrent
22%
Photoluminescence
44%
Photoluminescence Spectroscopy
13%
Quantum Dots
69%
Quantum Well
44%
Quantum Well Structure
14%
Quantum Wire
30%
Raman Scattering
18%
Raman Spectroscopy
21%
Room Temperature
14%
Self-assembled Quantum Dots
16%
Si(111)
17%
Si-doped
14%
Si1-xGex
26%
SiGe
95%
SiGe Quantum Well
20%
Single Quantum Dot
21%
Strained Layer Superlattices
14%
Superlattice
21%
Superlattices
54%
Two-dimensional Electron Systems
13%
Ultrafast
13%
Material Science
Activation Energy
5%
Aluminium Gallium Arsenide
5%
Atomic Force Microscopy
10%
Buffer Layer
5%
Carrier Concentration
11%
Density
21%
Electroluminescence
10%
Electron Mobility
6%
Epitaxy
8%
Erbium
10%
Film
8%
GaAs/AlGaAs
22%
Gallium Arsenide
89%
Germanium
7%
Heterojunction
46%
Indium Gallium Arsenide
18%
Light Scattering
5%
Linewidth
6%
Lithography
9%
Luminescence
23%
Micro-Raman Spectroscopy
7%
Molecular Beam Epitaxy
69%
Monolayers
13%
Nanostructure
18%
Nanowire
61%
Optical Property
16%
Photoluminescence
54%
Photonic Crystal
9%
Photosensor
8%
Quantum Dot
89%
Quantum Well
37%
Raman Spectroscopy
17%
Silicon
42%
Structural Property
6%
Superlattice
65%
Surface (Surface Science)
65%
Thin Films
5%
Transistor
11%
Transmission Electron Microscopy
12%
Waveguide
8%
Engineering
Aluminium Gallium Arsenide
29%
Atomic Force Microscopy
7%
Band Gap
20%
Band Structure
10%
Carrier Concentration
10%
Charge Storage
5%
Conduction Band
8%
Core-Shell
9%
Doped Gaas
6%
Electric Field
7%
Electron System
11%
Flat Surface
6%
Focused Laser Beam
9%
Gallium Arsenide
100%
Good Agreement
6%
Ground State
6%
Growth Condition
8%
Growth Temperature
9%
Heterojunctions
13%
Heterostructures
30%
High Resolution
9%
Indium Gallium Arsenide
23%
Low-Temperature
21%
Luminaires
15%
Magnetic Field
14%
Minibands
6%
Monolayers
9%
Nanomaterial
12%
Nanowire
40%
One Dimensional
11%
Optical Phonon
10%
Period Si
9%
Photocurrent
27%
Photodetector
6%
Quantum Dot
79%
Quantum Well
63%
Quantum Wire
19%
Raman Spectra
24%
Reciprocal Space
6%
Room Temperature
13%
Shell Nanowires
8%
Si Substrate
7%
Spatial Resolution
8%
Strained Layer
15%
Superlattice
69%
Tunnel
7%
Tunnel Construction
8%
Two Dimensional
30%
Valence Band
7%
Waveguide
5%
